Kingston 99U5471-020.A00LF 4GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

总分

Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

总分

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

差异规格评论

差异

Kingston 99U5471-020.A00LF 4GB

需要考虑的原因
Kingston 99U5471-020.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 71

左右 41% 更低的延时
更快的写入速度，GB/s

8.1 6.4

测试中的平均数值

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

需要考虑的原因
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

报告一个错误

更快的读取速度，GB/s

15.6 12.8

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 99U5471-020.A00LF 4GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 71
读取速度，GB/s

12.8 15.6
写入速度，GB/s

8.1 6.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2123 1650

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5173BH0-CH9 4GB

Kingston KHX2666C16S4/16G 16GB

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Samsung M4 70T2864QZ3-CE6 1GB

Samsung M4 70T2864QZ3-CE6 1GB

Ramaxel Technology RMSA3320MJ78HAF-3200 8GB

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Kingston 99U5474-010.A00LF 2GB

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Corsair CMK16GX4M4A2400C16 4GB

Corsair CMK16GX4M4A2400C16 4GB

Team Group Inc. UD5-6400 16GB

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Crucial Technology CT8G4SFS824A.C8FBR1 8GB

Crucial Technology CT8G4SFS824A.C8FBR1 8GB