Kingston 99U5471-052.A00LF 8GB vs G Skill Intl F4-3466C16-8GTZR 8GB

总分

Kingston 99U5471-052.A00LF 8GB

Kingston 99U5471-052.A00LF 8GB

总分

G Skill Intl F4-3466C16-8GTZR 8GB

G Skill Intl F4-3466C16-8GTZR 8GB

差异规格评论

差异

Kingston 99U5471-052.A00LF 8GB

需要考虑的原因
Kingston 99U5471-052.A00LF 8GB

报告一个错误

G Skill Intl F4-3466C16-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-3466C16-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 40

左右 -33% 更低的延时
更快的读取速度，GB/s

17.6 12.8

测试中的平均数值
更快的写入速度，GB/s

15.5 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5471-052.A00LF 8GB

G Skill Intl F4-3466C16-8GTZR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 30
读取速度，GB/s

12.8 17.6
写入速度，GB/s

7.3 15.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2233 3564

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Mushkin 991586 2GB

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Micron Technology 16ATF2G64AZ-3G2E1 16GB

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G Skill Intl F4-3600C18-32GVK 32GB

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Kingston 9905403-038.A00LF 4GB

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Samsung M378T5663QZ3-CF7 2GB

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-3200C15-16GTZ 16GB

G Skill Intl F4-3200C15-16GTZ 16GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

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Crucial Technology CT4G4DFS8213.C8FAR2 4GB

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