Kingston 99U5471-056.A00LF 8GB vs Crucial Technology CT4G4DFS824A.C8FADP 4GB

总分

Kingston 99U5471-056.A00LF 8GB

Kingston 99U5471-056.A00LF 8GB

总分

Crucial Technology CT4G4DFS824A.C8FADP 4GB

Crucial Technology CT4G4DFS824A.C8FADP 4GB

差异规格评论

差异

Kingston 99U5471-056.A00LF 8GB

需要考虑的原因
Kingston 99U5471-056.A00LF 8GB

报告一个错误

Crucial Technology CT4G4DFS824A.C8FADP 4GB

需要考虑的原因
Crucial Technology CT4G4DFS824A.C8FADP 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 41

左右 -64% 更低的延时
更快的读取速度，GB/s

16 13.3

测试中的平均数值
更快的写入速度，GB/s

11.0 8.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston 99U5471-056.A00LF 8GB

Crucial Technology CT4G4DFS824A.C8FADP 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 25
读取速度，GB/s

13.3 16.0
写入速度，GB/s

8.6 11.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2292 2544

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Samsung M393A2K43CB1-CRC 16GB

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Galaxy Microsystems Ltd. GALAX OC LAB 8GB

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SK Hynix DDR2 800 2G 2GB

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G Skill Intl F4-2800C15-16GRKD 16GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Corsair CMSX32GX4M2A3200C22 16GB

Corsair CMSX32GX4M2A3200C22 16GB

Kingston 99U5471-012.A00LF 4GB

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Kingston 99U5471-036.A00LF 8GB

Kingston 99U5471-036.A00LF 8GB

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Micron Technology 8ATF1G64HZ-2G3B2 8GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB