Kingston 99U5474-010.A00LF 2GB vs G Skill Intl F4-4266C19-8GTZR 8GB

总分

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

总分

G Skill Intl F4-4266C19-8GTZR 8GB

G Skill Intl F4-4266C19-8GTZR 8GB

差异规格评论

差异

Kingston 99U5474-010.A00LF 2GB

需要考虑的原因
Kingston 99U5474-010.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 7% 更低的延时

G Skill Intl F4-4266C19-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-4266C19-8GTZR 8GB

报告一个错误

更快的读取速度，GB/s

19.4 13.8

测试中的平均数值
更快的写入速度，GB/s

16.3 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-010.A00LF 2GB

G Skill Intl F4-4266C19-8GTZR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 27
读取速度，GB/s

13.8 19.4
写入速度，GB/s

7.8 16.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1995 3827

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-3600C16-8GTZKW 8GB

G Skill Intl F4-3600C16-8GTZKW 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CMU32GX4M4C3000C16 8GB

Corsair CMU32GX4M4C3000C16 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Corsair CMK16GX4M1D3000C16 16GB

Corsair CMK16GX4M1D3000C16 16GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Smart Modular SMU4WEC8C1K0464FCG 8GB

Smart Modular SMU4WEC8C1K0464FCG 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Panram International Corporation L421008G4C1528K34O8A 8GB

Panram International Corporation L421008G4C1528K34O8A 8

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Kingston KHX3000C16/16GX 16GB

Kingston KHX3000C16/16GX 16GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Ramaxel Technology RMUA5110MB78HAF2400 8GB

Ramaxel Technology RMUA5110MB78HAF2400 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

A Force Manufacturing Ltd. UD-01G64V2133P 8GB

A Force Manufacturing Ltd. UD-01G64V2133P 8GB

Kingston 9905403-515.A00LF 8GB

Kingston 9905403-515.A00LF 8GB

Corsair CMG16GX4M2E3200C16 8GB

Corsair CMG16GX4M2E3200C16 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Crucial Technology CT8G4SFD824A.C16FBD1 8GB

Crucial Technology CT8G4SFD824A.C16FBD1 8GB

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

Corsair CMT64GX4M8Z3600C16 8GB

Corsair CMT64GX4M8Z3600C16 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Samsung M471A5143EB1-CRC 4GB

Samsung M471A5143EB1-CRC 4GB