Kingston 99U5474-010.A00LF 2GB vs Kingston KHX3200C20S4/8G 8GB

总分

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

总分

Kingston KHX3200C20S4/8G 8GB

Kingston KHX3200C20S4/8G 8GB

差异规格评论

差异

Kingston 99U5474-010.A00LF 2GB

需要考虑的原因
Kingston 99U5474-010.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

25 33

左右 24% 更低的延时

Kingston KHX3200C20S4/8G 8GB

需要考虑的原因
Kingston KHX3200C20S4/8G 8GB

报告一个错误

更快的读取速度，GB/s

16.7 13.8

测试中的平均数值
更快的写入速度，GB/s

13.2 7.8

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-010.A00LF 2GB

Kingston KHX3200C20S4/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 33
读取速度，GB/s

13.8 16.7
写入速度，GB/s

7.8 13.2
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1995 3075

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMZ16GX3M2A2400C10 8GB

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A-DATA Technology DDR3 1600 4GB

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Samsung M393A1G40EB1-CPB 8GB

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PNY Electronics PNY 2GB

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G Skill Intl F4-3333C16-8GTZB 8GB

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Crucial Technology CT16G4SFRA32A.C16FP 16GB

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Kingston KHX1866C10D3/8GX 8GB

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Kingston KP6FH5-MIE 32GB

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G Skill Intl F4-3200C16-16GSXKB 16GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Crucial Technology BL8G30C15U4WL.M8FE1 8GB

Crucial Technology BL8G30C15U4WL.M8FE1 8GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

G Skill Intl F4-2800C14-16GVK 16GB

G Skill Intl F4-2800C14-16GVK 16GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Kingston KF3000C15D4/8GX 8GB

Kingston KF3000C15D4/8GX 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Samsung M391A1G43EB1-CPB 8GB

Samsung M391A1G43EB1-CPB 8GB