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Kingston 99U5474-010.A00LF 2GB
Transcend Information TS512MLH64V4H 4GB

Kingston 99U5474-010.A00LF 2GB vs Transcend Information TS512MLH64V4H 4GB

总分
star star star star star
Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

总分
star star star star star
Transcend Information TS512MLH64V4H 4GB

Transcend Information TS512MLH64V4H 4GB

差异 规格 评论

差异

Kingston 99U5474-010.A00LF 2GB 需要考虑的原因
Kingston 99U5474-010.A00LF 2GB
报告一个错误
Transcend Information TS512MLH64V4H 4GB 需要考虑的原因
Transcend Information TS512MLH64V4H 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 25
    左右 -9% 更低的延时
  • 更快的读取速度，GB/s
    16.6 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston 99U5474-010.A00LF 2GB
Transcend Information TS512MLH64V4H 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 23
  • 读取速度，GB/s
    13.8 left arrow 16.6
  • 写入速度，GB/s
    7.8 left arrow 13.0
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1995 left arrow 2548

Kingston 99U5474-010.A00LF 2GB RAM的比较

Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-016.A00LF 4GB

Transcend Information TS512MLH64V4H 4GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Transcend Information TS512MLH64V4H 4GB
Transcend Information TS512MLH64V4H 4GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
V-GEN D4S8GL30A8TS5 8GB
V-GEN D4S8GL30A8TS5 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Chun Well Technology Holding Limited D4U0832160B 8GB
Chun Well Technology Holding Limited D4U0832160B 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMW32GX4M2A2666C16 16GB
Corsair CMW32GX4M2A2666C16 16GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
EVGA 16G-D4-2666-MR 4GB
EVGA 16G-D4-2666-MR 4GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Transcend Information TS2GLH64V6B 16GB
Transcend Information TS2GLH64V6B 16GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Corsair CMV8GX4M1L2400C16 8GB
Corsair CMV8GX4M1L2400C16 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMK64GX4M4C3333C16 16GB
Corsair CMK64GX4M4C3333C16 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
V-Color Technology Inc. TA48G30S815G 8GB
V-Color Technology Inc. TA48G30S815G 8GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
Kingmax Semiconductor GLLH22F-18KCGA------ 16GB
Kingmax Semiconductor GLLH22F-18KCGA------ 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Gloway International (HK) STK4U2400D17041C 4GB
Gloway International (HK) STK4U2400D17041C 4GB
内存RAM