Kingston 99U5474-013.A00LF 2GB vs Samsung M393A1G43EB1-CRC 8GB

总分

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

总分

Samsung M393A1G43EB1-CRC 8GB

Samsung M393A1G43EB1-CRC 8GB

差异规格评论

差异

Kingston 99U5474-013.A00LF 2GB

需要考虑的原因
Kingston 99U5474-013.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 49

左右 45% 更低的延时

Samsung M393A1G43EB1-CRC 8GB

需要考虑的原因
Samsung M393A1G43EB1-CRC 8GB

报告一个错误

更快的读取速度，GB/s

10.9 10

测试中的平均数值
更快的写入速度，GB/s

8.3 5.7

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-013.A00LF 2GB

Samsung M393A1G43EB1-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 49
读取速度，GB/s

10.0 10.9
写入速度，GB/s

5.7 8.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1435 2413

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Chun Well Technology Holding Limited MD4U0840180BCW 8GB

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Samsung 1600 CL10 Series 8GB

Crucial Technology CT16G4DFRA32A.M16FJ1 16GB

Crucial Technology CT16G4DFRA32A.M16FJ1 16GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

InnoDisk Corporation 16GB

InnoDisk Corporation 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

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Corsair CMG16GX4M2E3200C16 8GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB