Kingston 99U5474-022.A00LF 2GB vs G Skill Intl F4-2400C17-8GFT 8GB

总分

Kingston 99U5474-022.A00LF 2GB

Kingston 99U5474-022.A00LF 2GB

总分

G Skill Intl F4-2400C17-8GFT 8GB

G Skill Intl F4-2400C17-8GFT 8GB

差异规格评论

差异

Kingston 99U5474-022.A00LF 2GB

需要考虑的原因
Kingston 99U5474-022.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 73

左右 64% 更低的延时
更快的写入速度，GB/s

9.5 7.5

测试中的平均数值

G Skill Intl F4-2400C17-8GFT 8GB

需要考虑的原因
G Skill Intl F4-2400C17-8GFT 8GB

报告一个错误

更快的读取速度，GB/s

15 13

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-022.A00LF 2GB

G Skill Intl F4-2400C17-8GFT 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 73
读取速度，GB/s

13.0 15.0
写入速度，GB/s

9.5 7.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2030 1838

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Crucial Technology BL16G36C16U4W.M8FB1 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Corsair CM4X4GF2400C16K4 4GB

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Kingston 99U5474-022.A00LF 2GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Transcend Information JM3200HLG-8G 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Micron Technology 8ATF51264HZ-2G1B1 4GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Crucial Technology BLS16G4D26BFSB.16FBD 16GB

Crucial Technology BLS16G4D26BFSB.16FBD 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-2400C15-4GRR 4GB

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Kingston 99U5474-023.A00LF 4GB

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A-DATA Technology AO1P26KCST2-BZISHC 16GB

A-DATA Technology AO1P26KCST2-BZISHC 16GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Micron Technology 8ATF1G64AZ-2G6J1 8GB

Micron Technology 8ATF1G64AZ-2G6J1 8GB