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Kingston 99U5474-022.A00LF 2GB
Micron Technology CT4G4DFS8213.8FA11 4GB

Kingston 99U5474-022.A00LF 2GB vs Micron Technology CT4G4DFS8213.8FA11 4GB

总分
star star star star star
Kingston 99U5474-022.A00LF 2GB

Kingston 99U5474-022.A00LF 2GB

总分
star star star star star
Micron Technology CT4G4DFS8213.8FA11 4GB

Micron Technology CT4G4DFS8213.8FA11 4GB

差异 规格 评论

差异

Kingston 99U5474-022.A00LF 2GB 需要考虑的原因
Kingston 99U5474-022.A00LF 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 35
    左右 26% 更低的延时
Micron Technology CT4G4DFS8213.8FA11 4GB 需要考虑的原因
Micron Technology CT4G4DFS8213.8FA11 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15 left arrow 13
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston 99U5474-022.A00LF 2GB
Micron Technology CT4G4DFS8213.8FA11 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 35
  • 读取速度，GB/s
    13.0 left arrow 15.0
  • 写入速度，GB/s
    9.5 left arrow 12.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2030 left arrow 2654

Kingston 99U5474-022.A00LF 2GB RAM的比较

Kingston 99U5474-010.A00LF 2GB
Kingston 99U5584-005.A00LF 4GB

Micron Technology CT4G4DFS8213.8FA11 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5474-022.A00LF 2GB
Kingston 99U5474-022.A00LF 2GB
Micron Technology CT4G4DFS8213.8FA11 4GB
Micron Technology CT4G4DFS8213.8FA11 4GB
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Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Samsung M378A5143DB0-CPB 4GB
Samsung M378A5143DB0-CPB 4GB
内存RAM
Kingston 9965525-058.A00LF 8GB
Kingston 9965525-058.A00LF 8GB
G Skill Intl F4-4400C18-8GTZRC 8GB
G Skill Intl F4-4400C18-8GTZRC 8GB
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AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
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Essencore Limited IMA41GU6MFR8N-CF0 8GB
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Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
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Kingmax Semiconductor GSJF62F-DA---------- 4GB
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Kingston ACR16D3LS1KNG/8G 8GB
Kingston ACR16D3LS1KNG/8G 8GB
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G Skill Intl F4-2400C17-8GNT 8GB
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Apacer Technology 78.DAGQ7.40B0B 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
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内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
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Kingston K9CXF2-MIE 8GB
内存RAM
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Samsung M471B5673FH0-CF8 2GB
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Corsair CMSX64GX4M2A2666C18 32GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
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Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
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Corsair CMSX64GX4M2A2933C19 32GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Netac Technology Co Ltd EKBLACK4163216AD 8GB
内存RAM