Kingston 99U5474-023.A00LF 4GB vs Micron Technology 16ATF1G64HZ-2G1A2 8GB

总分

Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

总分

Micron Technology 16ATF1G64HZ-2G1A2 8GB

Micron Technology 16ATF1G64HZ-2G1A2 8GB

差异规格评论

差异

Kingston 99U5474-023.A00LF 4GB

需要考虑的原因
Kingston 99U5474-023.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 29% 更低的延时

Micron Technology 16ATF1G64HZ-2G1A2 8GB

需要考虑的原因
Micron Technology 16ATF1G64HZ-2G1A2 8GB

报告一个错误

更快的读取速度，GB/s

13.9 12.8

测试中的平均数值
更快的写入速度，GB/s

10.5 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-023.A00LF 4GB

Micron Technology 16ATF1G64HZ-2G1A2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 38
读取速度，GB/s

12.8 13.9
写入速度，GB/s

7.5 10.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2032 2400

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

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Samsung M393B2G70BH0-CH9 16GB

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Avant Technology J642GU42J7240N2 16GB

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Kingston X75V1H-MIE 32GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Crucial Technology BLS4G4D240FSA.M8FADG 4GB

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Kingston 9965516-430.A00G 16GB

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Corsair CMW16GX4M2Z3200C16 8GB

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Samsung M393B1G70BH0-CK0 8GB

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Gold Key Technology Co Ltd GKE160SO102408-3200 16GB

Gold Key Technology Co Ltd GKE160SO102408-3200 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

G Skill Intl F4-3000C16-16GTZR 16GB

G Skill Intl F4-3000C16-16GTZR 16GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Crucial Technology CT4G4DFS8213.8FA11 4GB

Crucial Technology CT4G4DFS8213.8FA11 4GB

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Essencore Limited IM48GU88N26-GIIHMB 8GB

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Samsung M393A2K40CB2-CTD 16GB