Kingston 99U5474-028.A00LF 4GB vs Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

总分

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

总分

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

差异规格评论

差异

Kingston 99U5474-028.A00LF 4GB

需要考虑的原因
Kingston 99U5474-028.A00LF 4GB

报告一个错误

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 39

左右 -70% 更低的延时
更快的读取速度，GB/s

16.8 12.6

测试中的平均数值
更快的写入速度，GB/s

12.5 6.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-028.A00LF 4GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 23
读取速度，GB/s

12.6 16.8
写入速度，GB/s

6.8 12.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1954 2795

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM4X8GF2400C16N2 8GB

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Kingston 99U5474-028.A00LF 4GB

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Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

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Samsung M3 78T2863EHS-CF7 1GB

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Kingston 9905599-020.A00G 8GB

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

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Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N