Kingston 99U5474-028.A00LF 4GB vs Samsung M378A4G43AB2-CWE 32GB

总分

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

总分

Samsung M378A4G43AB2-CWE 32GB

Samsung M378A4G43AB2-CWE 32GB

差异规格评论

差异

Kingston 99U5474-028.A00LF 4GB

需要考虑的原因
Kingston 99U5474-028.A00LF 4GB

报告一个错误

Samsung M378A4G43AB2-CWE 32GB

需要考虑的原因
Samsung M378A4G43AB2-CWE 32GB

报告一个错误

低于PassMark测试中的延时，ns

37 39

左右 -5% 更低的延时
更快的读取速度，GB/s

16.9 12.6

测试中的平均数值
更快的写入速度，GB/s

14.4 6.8

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-028.A00LF 4GB

Samsung M378A4G43AB2-CWE 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 37
读取速度，GB/s

12.6 16.9
写入速度，GB/s

6.8 14.4
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1954 3419

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

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Kingston 99U5471-012.A00LF 4GB

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

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Samsung M386B4G70DM0-CMA4 32GB

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Crucial Technology BLT4G4D30AETA.K8FD 4GB

Crucial Technology BLT4G4D30AETA.K8FD 4GB

Crucial Technology CT51264BA1339.D16F 4GB

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AMD R5316G1609U2K 8GB

Nanya Technology M471A5143EB1-CRC 4GB

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Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

SK Hynix HMA451U6MFR8N-TF 4GB

SK Hynix HMA451U6MFR8N-TF 4GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

V-Color Technology Inc. TN416G26D819-SB 16GB

V-Color Technology Inc. TN416G26D819-SB 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Maxsun MSD48G32Q3 8GB

Maxsun MSD48G32Q3 8GB

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Kingston 9905471-006.A00LF 4GB

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Kingston 99U5701-003.A00G 16GB