Kingston 99U5474-028.A00LF 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

总分

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

差异规格评论

差异

Kingston 99U5474-028.A00LF 4GB

需要考虑的原因
Kingston 99U5474-028.A00LF 4GB

报告一个错误

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 39

左右 -117% 更低的延时
更快的读取速度，GB/s

20.4 12.6

测试中的平均数值
更快的写入速度，GB/s

18.1 6.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-028.A00LF 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 18
读取速度，GB/s

12.6 20.4
写入速度，GB/s

6.8 18.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1954 3529

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-2933C16-8GFX 8GB

G Skill Intl F4-2933C16-8GFX 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Apacer Technology 78.BAGSR.4030B 4GB

Apacer Technology 78.BAGSR.4030B 4GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Kingston 9932291-002.A00G 4GB

Kingston 9932291-002.A00G 4GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Corsair CMT16GX4M2C3600C18 8GB

Corsair CMT16GX4M2C3600C18 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Kingston KF3600C16D4/16GX 16GB

Kingston KF3600C16D4/16GX 16GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Crucial Technology CT8G4DFS832A.C8FE 8GB

Crucial Technology CT8G4DFS832A.C8FE 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Crucial Technology BLS16G4D32AESC.M16FE 16GB

Crucial Technology BLS16G4D32AESC.M16FE 16GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-2800C18-8GRS 8GB

G Skill Intl F4-2800C18-8GRS 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Corsair CM4X8GE2666C16K4 8GB

Corsair CM4X8GE2666C16K4 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Crucial Technology BLS16G4S26BFSD.16FD 16GB

Crucial Technology BLS16G4S26BFSD.16FD 16GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Kingston KF3200C20S4/16G 16GB

Kingston KF3200C20S4/16G 16GB