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Kingston 99U5474-037.A00LF 4GB
Micron Technology 4ATF51264AZ-3G2E1 4GB

Kingston 99U5474-037.A00LF 4GB vs Micron Technology 4ATF51264AZ-3G2E1 4GB

总分
star star star star star
Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

总分
star star star star star
Micron Technology 4ATF51264AZ-3G2E1 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

差异 规格 评论

差异

Kingston 99U5474-037.A00LF 4GB 需要考虑的原因
Kingston 99U5474-037.A00LF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 48
    左右 23% 更低的延时
Micron Technology 4ATF51264AZ-3G2E1 4GB 需要考虑的原因
Micron Technology 4ATF51264AZ-3G2E1 4GB
报告一个错误
  • 更快的读取速度，GB/s
    17.5 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.3 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Kingston 99U5474-037.A00LF 4GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 48
  • 读取速度，GB/s
    13.7 left arrow 17.5
  • 写入速度，GB/s
    7.8 left arrow 8.3
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2102 left arrow 2196

Kingston 99U5474-037.A00LF 4GB RAM的比较

Kingston 99U5584-007.A00LF 4GB
Samsung M378B5273DH0-CH9 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
Wilk Elektronik S.A. GR2133S464L15/8G 8GB
Wilk Elektronik S.A. GR2133S464L15/8G 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 9905734-073.A00G 16GB
Kingston 9905734-073.A00G 16GB
内存RAM
OCZ OCZ2V8002G 2GB
OCZ OCZ2V8002G 2GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
内存RAM
Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
G Skill Intl F4-3200C22-8GRS 8GB
G Skill Intl F4-3200C22-8GRS 8GB
内存RAM
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Micron Technology 8ATF51264AZ-2G1B1 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
内存RAM
Kingston ACR16D3LS1NGG/4G 4GB
Kingston ACR16D3LS1NGG/4G 4GB
Kingston ACR16D3LS1KNG/4G 4GB
Kingston ACR16D3LS1KNG/4G 4GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMA82GS6JJR8N-VK 16GB
SK Hynix HMA82GS6JJR8N-VK 16GB
内存RAM
Kingston KHX1600C9S3L/8G 8GB
Kingston KHX1600C9S3L/8G 8GB
Kingston 9905663-016.A00G 16GB
Kingston 9905663-016.A00G 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Teikon TMA851U6CJR6N-VKSC 4GB
Teikon TMA851U6CJR6N-VKSC 4GB
内存RAM