Kingston 99U5474-038.A00LF 4GB vs Corsair CMD32GX4M4B2400C10 8GB

总分

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

总分

Corsair CMD32GX4M4B2400C10 8GB

Corsair CMD32GX4M4B2400C10 8GB

差异规格评论

差异

Kingston 99U5474-038.A00LF 4GB

需要考虑的原因
Kingston 99U5474-038.A00LF 4GB

报告一个错误

Corsair CMD32GX4M4B2400C10 8GB

需要考虑的原因
Corsair CMD32GX4M4B2400C10 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 40

左右 -29% 更低的延时
更快的读取速度，GB/s

16.1 12.9

测试中的平均数值
更快的写入速度，GB/s

11.5 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-038.A00LF 4GB

Corsair CMD32GX4M4B2400C10 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 31
读取速度，GB/s

12.9 16.1
写入速度，GB/s

7.5 11.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2078 3130

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT16G4DFRA32A.C16FP 16GB

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Crucial Technology CT8G4SFD8213.C16FBR2 8GB

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Kingston 9905471-006.A01LF 4GB

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Samsung M378B5273DH0-CH9 4GB

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Corsair CMT64GX4M4K3600C16 16GB

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A-DATA Technology AO2P24HCST2-BTVS 16GB

A-DATA Technology AO2P24HCST2-BTVS 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

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Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

SK Hynix HMA851S6DJR6N-XN 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

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Corsair CMT16GX4M2C3200C16 8GB

Corsair CMT16GX4M2C3200C16 8GB