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Kingston 99U5584-003.A00LF 4GB
Crucial Technology CT51264BA160BJ.C8F 4GB
比较
Kingston 99U5584-003.A00LF 4GB vs Crucial Technology CT51264BA160BJ.C8F 4GB
总分
Kingston 99U5584-003.A00LF 4GB
总分
Crucial Technology CT51264BA160BJ.C8F 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston 99U5584-003.A00LF 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
40
左右 33% 更低的延时
需要考虑的原因
Crucial Technology CT51264BA160BJ.C8F 4GB
报告一个错误
更快的读取速度,GB/s
14.2
13.1
测试中的平均数值
更快的写入速度,GB/s
8.1
7.5
测试中的平均数值
规格
完整的技术规格清单
Kingston 99U5584-003.A00LF 4GB
Crucial Technology CT51264BA160BJ.C8F 4GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
27
40
读取速度,GB/s
13.1
14.2
写入速度,GB/s
7.5
8.1
内存带宽,mbps
12800
12800
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度
9-9-9-24 / 1600 MHz
9-9-9-24 / 1600 MHz
排名PassMark (越多越好)
2097
2192
Kingston 99U5584-003.A00LF 4GB RAM的比较
SK Hynix HMT451U6MFR8C-PB 4GB
Crucial Technology CT51264BA160BJ.C8F 4GB RAM的比较
SK Hynix HMT451U6MFR8C-PB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CMK128GX4M8B3200C16 16GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3600C16-8GTZR 8GB
Crucial Technology CT51264BD160B.C16F 4GB
SK Hynix HMT451U6MFR8C-PB 4GB
takeMS International AG TMS2GB264D083805EV 2GB
Corsair CMK16GX4M4B3000C15 4GB
Samsung M471B5273EB0-CK0 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Kingston KHX2133C11D3/4GX 4GB
Corsair CMU64GX4M4D3000C16 16GB
Samsung M3 78T2863QZS-CF7 1GB
InnoDisk Corporation M4C0-AGS1TCSJ 16GB
Samsung M393B5170FH0-CK0 4GB
Samsung M378A2K43DB1-CVF 16GB
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