Kingston 99U5584-004.A00LF 4GB vs Nanya Technology NT8GA64D88AX3S-HR 8GB

总分

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

总分

Nanya Technology NT8GA64D88AX3S-HR 8GB

Nanya Technology NT8GA64D88AX3S-HR 8GB

差异规格评论

差异

Kingston 99U5584-004.A00LF 4GB

需要考虑的原因
Kingston 99U5584-004.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 96

左右 72% 更低的延时
更快的读取速度，GB/s

13.1 6.8

测试中的平均数值
更快的写入速度，GB/s

7.7 4.2

测试中的平均数值

Nanya Technology NT8GA64D88AX3S-HR 8GB

需要考虑的原因
Nanya Technology NT8GA64D88AX3S-HR 8GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston 99U5584-004.A00LF 4GB

Nanya Technology NT8GA64D88AX3S-HR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 96
读取速度，GB/s

13.1 6.8
写入速度，GB/s

7.7 4.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2009 992

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology NT8GA64D88AX3S-HR 8GB

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Kingston 9905702-010.A00G 8GB

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Crucial Technology BL16G32C16S4B.M16FE 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Micron Technology 4ATS1G64HZ-2G3B1 8GB

Micron Technology 4ATS1G64HZ-2G3B1 8GB

Elpida 99U5458-005.A00LF 4GB

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Crucial Technology CT8G48C40U5.M4A1 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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SK Hynix HMT325S6BFR8C-H9 2GB

Samsung M471A5244BB0-CRC 4GB

Samsung M471A5244BB0-CRC 4GB