Kingston 99U5584-004.A00LF 4GB vs Patriot Memory (PDP Systems) 3600 C17 Series 4GB

总分

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

总分

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

差异规格评论

差异

Kingston 99U5584-004.A00LF 4GB

需要考虑的原因
Kingston 99U5584-004.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 18% 更低的延时

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 3600 C17 Series 4GB

报告一个错误

更快的读取速度，GB/s

17.5 13.1

测试中的平均数值
更快的写入速度，GB/s

15.8 7.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 99U5584-004.A00LF 4GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 33
读取速度，GB/s

13.1 17.5
写入速度，GB/s

7.7 15.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2009 3482

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Crucial Technology BL16G36C16U4BL.M16FE 16GB

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SK Hynix HMT325S6CFR8C-H9 2GB

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Corsair CMK32GX4M2A2133C13 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Terabyte Co Ltd RCX2-16G3600A 8GB

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Ramaxel Technology RMSA3260MH78H8H-2666 8GB

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SK Hynix HMA81GU6DJR8N-XN 8GB

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Micron Technology 9ASF51272PZ-2G3B1 4GB

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Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Corsair CMW32GX4M4C3466C16 8GB

Corsair CMW32GX4M4C3466C16 8GB

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

SK Hynix HMA451R7MFR8N-TFTD 4GB

SK Hynix HMA451R7MFR8N-TFTD 4GB

Kingston 9905403-011.A03LF 2GB

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G Skill Intl F4-2800C17-8GIS 8GB

G Skill Intl F4-2800C17-8GIS 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology CT8G4SFD824A.C16FE 8GB

Crucial Technology CT8G4SFD824A.C16FE 8GB