Kingston 99U5584-004.A00LF 4GB vs Samsung M378A2G43MB1-CTD 16GB

总分

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

总分

Samsung M378A2G43MB1-CTD 16GB

Samsung M378A2G43MB1-CTD 16GB

差异规格评论

差异

Kingston 99U5584-004.A00LF 4GB

需要考虑的原因
Kingston 99U5584-004.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 43

左右 37% 更低的延时
更快的读取速度，GB/s

13.1 11.6

测试中的平均数值

Samsung M378A2G43MB1-CTD 16GB

需要考虑的原因
Samsung M378A2G43MB1-CTD 16GB

报告一个错误

更快的写入速度，GB/s

11.2 7.7

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Kingston 99U5584-004.A00LF 4GB

Samsung M378A2G43MB1-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 43
读取速度，GB/s

13.1 11.6
写入速度，GB/s

7.7 11.2
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2009 2615

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix DDR2 800 2G 2GB

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Mushkin 991586 2GB

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Apacer Technology 78.CAGPP.ARW0B 8GB

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SK Hynix HMA41GR7AFR4N-TF 8GB

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Ramaxel Technology RMT3170ME68F9F1600 4GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Micron Technology 16KTF1G64HZ-1G9E2 8GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

SK Hynix HMA82GS6DJR8N-WM 16GB

SK Hynix HMA82GS6DJR8N-WM 16GB

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

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Samsung M395T2863QZ4-CF76 1GB

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Corsair CMSX16GX4M2A2666C18 8GB