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Kingston 99U5584-004.A00LF 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Kingston 99U5584-004.A00LF 4GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

总分
star star star star star
Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

总分
star star star star star
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

差异 规格 评论

差异

Kingston 99U5584-004.A00LF 4GB 需要考虑的原因
Kingston 99U5584-004.A00LF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 72
    左右 63% 更低的延时
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB 需要考虑的原因
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.3 left arrow 13.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.0 left arrow 7.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston 99U5584-004.A00LF 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 72
  • 读取速度，GB/s
    13.1 left arrow 15.3
  • 写入速度，GB/s
    7.7 left arrow 8.0
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2009 left arrow 1817

Kingston 99U5584-004.A00LF 4GB RAM的比较

Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston KYXC0V-MIB 16GB
Kingston KYXC0V-MIB 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
SK Hynix GKE160SO102408-2400 16GB
SK Hynix GKE160SO102408-2400 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965600-005.A01G 16GB
Kingston 9965600-005.A01G 16GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Crucial Technology CT8G4SFS824A.C8FE 8GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
内存RAM
Apacer Technology AQD-D4U8GN24-SE 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Transcend Information TS512MSH64V1H 4GB
Transcend Information TS512MSH64V1H 4GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3600C18-8GTZN 8GB
G Skill Intl F4-3600C18-8GTZN 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Kingston 9905665-009.A00G 4GB
Kingston 9905665-009.A00G 4GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB
内存RAM
Kingston 99U5471-002.A01LF 2GB
Kingston 99U5471-002.A01LF 2GB
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB
Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3600C14-16GTRS 16GB
G Skill Intl F4-3600C14-16GTRS 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Kingston ACR26D4S9S1KA-4 4GB
Kingston ACR26D4S9S1KA-4 4GB
内存RAM