Kingston 99U5584-005.A00LF 4GB vs G Skill Intl F4-3600C16-16GTZR 16GB

总分

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

总分

G Skill Intl F4-3600C16-16GTZR 16GB

G Skill Intl F4-3600C16-16GTZR 16GB

差异规格评论

差异

Kingston 99U5584-005.A00LF 4GB

需要考虑的原因
Kingston 99U5584-005.A00LF 4GB

报告一个错误

G Skill Intl F4-3600C16-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-3600C16-16GTZR 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 40

左右 -60% 更低的延时
更快的读取速度，GB/s

20.1 13.2

测试中的平均数值
更快的写入速度，GB/s

18.3 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 99U5584-005.A00LF 4GB

G Skill Intl F4-3600C16-16GTZR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 25
读取速度，GB/s

13.2 20.1
写入速度，GB/s

7.8 18.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2125 4174

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393B5270CH0-CH9 4GB

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Patriot Memory (PDP Systems) PSD44G266641 4GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Mushkin 991988 (996988) 4GB

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A-DATA Technology AO2P24HCST2-BTCS 16GB

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Corsair CM2X1024-8500C5D 1GB

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G Skill Intl F4-3000C15-4GTZB 4GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Wilk Elektronik S.A. IRH3200D464L16S/8G 8GB

Wilk Elektronik S.A. IRH3200D464L16S/8G 8GB

Samsung M378B5273CH0-CH9 4GB

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Kingston KF3200C16D4/8GX 8GB

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Kingston 9905471-006.A00LF 4GB

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Corsair CMH16GX4M2E3200C16 8GB

Corsair CMH16GX4M2E3200C16 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

Crucial Technology BLS8G4D26BFSBK.8FBD 8GB