Kingston 99U5584-010.A00LF 4GB vs Kingston KMKYF9-MID 8GB

总分

Kingston 99U5584-010.A00LF 4GB

Kingston 99U5584-010.A00LF 4GB

总分

Kingston KMKYF9-MID 8GB

Kingston KMKYF9-MID 8GB

差异规格评论

差异

Kingston 99U5584-010.A00LF 4GB

需要考虑的原因
Kingston 99U5584-010.A00LF 4GB

报告一个错误

Kingston KMKYF9-MID 8GB

需要考虑的原因
Kingston KMKYF9-MID 8GB

报告一个错误

更快的读取速度，GB/s

15 12.8

测试中的平均数值
更快的写入速度，GB/s

11.2 7.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston 99U5584-010.A00LF 4GB

Kingston KMKYF9-MID 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 35
读取速度，GB/s

12.8 15.0
写入速度，GB/s

7.1 11.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1937 2627

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMW128GX4M8X3600C18 16GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Micron Technology 8ATF1G64AZ-2G3H1 8GB

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Samsung M378B5273CH0-CH9 4GB

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G Skill Intl F3-2400C11-8GSR 8GB

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Vasekey M378A1K43BB2-CPB 8GB

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Samsung M471B1G73QH0-YK0 8GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

SK Hynix HMA82GU6DJR8N-WM 16GB

SK Hynix HMA82GU6DJR8N-WM 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Smart Modular SMS4WEC8C2K0446FCG 16GB

Smart Modular SMS4WEC8C2K0446FCG 16GB

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Kingston 9905403-444.A00LF 4GB

G Skill Intl F4-3200C16-16GSXWB 16GB

G Skill Intl F4-3200C16-16GSXWB 16GB