Kingston 99U5584-010.A00LF 4GB vs Micron Technology 8ATF51264AZ-2G1A2 4GB

总分

Kingston 99U5584-010.A00LF 4GB

Kingston 99U5584-010.A00LF 4GB

总分

Micron Technology 8ATF51264AZ-2G1A2 4GB

Micron Technology 8ATF51264AZ-2G1A2 4GB

差异规格评论

差异

Kingston 99U5584-010.A00LF 4GB

需要考虑的原因
Kingston 99U5584-010.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 36

左右 3% 更低的延时

Micron Technology 8ATF51264AZ-2G1A2 4GB

需要考虑的原因
Micron Technology 8ATF51264AZ-2G1A2 4GB

报告一个错误

更快的读取速度，GB/s

15.8 12.8

测试中的平均数值
更快的写入速度，GB/s

11.0 7.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 99U5584-010.A00LF 4GB

Micron Technology 8ATF51264AZ-2G1A2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 36
读取速度，GB/s

12.8 15.8
写入速度，GB/s

7.1 11.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1937 2417

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMK32GX4M4A2666C15 8GB

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G Skill Intl F4-3000C14-8GVR 8GB

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A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMD32GX4M2A2800C16 16GB

Corsair CMD32GX4M2A2800C16 16GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

Crucial Technology CT8G4SFD8213.C16FDD2 8GB

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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Kingston 9905670-012.A00G 8GB

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