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Kingston 99U5584-017.A00LF 4GB
SK Hynix HMA81GR7MFR8N-UH 8GB

Kingston 99U5584-017.A00LF 4GB vs SK Hynix HMA81GR7MFR8N-UH 8GB

总分
star star star star star
Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

总分
star star star star star
SK Hynix HMA81GR7MFR8N-UH 8GB

SK Hynix HMA81GR7MFR8N-UH 8GB

差异 规格 评论

差异

Kingston 99U5584-017.A00LF 4GB 需要考虑的原因
Kingston 99U5584-017.A00LF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 56
    左右 61% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 9.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.8 left arrow 7.2
    测试中的平均数值
SK Hynix HMA81GR7MFR8N-UH 8GB 需要考虑的原因
SK Hynix HMA81GR7MFR8N-UH 8GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston 99U5584-017.A00LF 4GB
SK Hynix HMA81GR7MFR8N-UH 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    22 left arrow 56
  • 读取速度，GB/s
    15.5 left arrow 9.5
  • 写入速度，GB/s
    9.8 left arrow 7.2
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2510 left arrow 2138

Kingston 99U5584-017.A00LF 4GB RAM的比较

Samsung M378B5173EB0-YK0 4GB
Kingston 9905584-016.A00LF 4GB

SK Hynix HMA81GR7MFR8N-UH 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-061.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5584-017.A00LF 4GB
Kingston 99U5584-017.A00LF 4GB
SK Hynix HMA81GR7MFR8N-UH 8GB
SK Hynix HMA81GR7MFR8N-UH 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB
Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-4400C17-16GTZR 16GB
G Skill Intl F4-4400C17-16GTZR 16GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-2400C15-16GVR 16GB
G Skill Intl F4-2400C15-16GVR 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Kingston 99U5702-095.A00G 8GB
Kingston 99U5702-095.A00G 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Samsung M378A5244CB0-CRC 4GB
Samsung M378A5244CB0-CRC 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9965604-027.D00G 8GB
Kingston 9965604-027.D00G 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
SK Hynix HMA81GS6AFR8N-VK 8GB
SK Hynix HMA81GS6AFR8N-VK 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Kingston 9905625-139.A00G 16GB
Kingston 9905625-139.A00G 16GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Kingmax Semiconductor GLAG42F-18---------- 8GB
Kingmax Semiconductor GLAG42F-18---------- 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB
Wilk Elektronik S.A. GX3236D464S/8GSBS1 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT4G4SFS8213.C8FADP 4GB
Crucial Technology CT4G4SFS8213.C8FADP 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Samsung M471A5644EB0-CPB 2GB
Samsung M471A5644EB0-CPB 2GB
内存RAM