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Kingston 99U5595-005.A00LF 2GB
Wilk Elektronik S.A. W-HK26S16G 16GB
比较
Kingston 99U5595-005.A00LF 2GB vs Wilk Elektronik S.A. W-HK26S16G 16GB
总分
Kingston 99U5595-005.A00LF 2GB
总分
Wilk Elektronik S.A. W-HK26S16G 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston 99U5595-005.A00LF 2GB
报告一个错误
低于PassMark测试中的延时,ns
26
27
左右 4% 更低的延时
需要考虑的原因
Wilk Elektronik S.A. W-HK26S16G 16GB
报告一个错误
更快的读取速度,GB/s
17.6
13.2
测试中的平均数值
更快的写入速度,GB/s
13.6
7.3
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Kingston 99U5595-005.A00LF 2GB
Wilk Elektronik S.A. W-HK26S16G 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
27
读取速度,GB/s
13.2
17.6
写入速度,GB/s
7.3
13.6
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1489
3029
Kingston 99U5595-005.A00LF 2GB RAM的比较
Kingston 99P5471-002.AOOLF 4GB
Kingston 99P5471-002.A00LF 2GB
Wilk Elektronik S.A. W-HK26S16G 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Avant Technology J642GU42J9266NF 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Kingston 99U5595-005.A00LF 2GB
Wilk Elektronik S.A. W-HK26S16G 16GB
Corsair CMX4GX3M1A1600C9 4GB
Samsung M378A4G43AB2-CWE 32GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Mushkin MES4S213FF16G28 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston X2YH1K-MIE 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Teikon TMA451S6AFR8N-TFSC 4GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLS4G4D240FSA.8FAR 4GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CB8GS2400.C8ET 8GB
报告一个错误
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Bug description
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