Kingston 99U5701-036.A00G 16GB vs G Skill Intl F4-4000C15-8GTZR 8GB

总分

Kingston 99U5701-036.A00G 16GB

Kingston 99U5701-036.A00G 16GB

总分

G Skill Intl F4-4000C15-8GTZR 8GB

G Skill Intl F4-4000C15-8GTZR 8GB

差异规格评论

差异

Kingston 99U5701-036.A00G 16GB

需要考虑的原因
Kingston 99U5701-036.A00G 16GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

G Skill Intl F4-4000C15-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-4000C15-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 374

左右 -1396% 更低的延时
更快的读取速度，GB/s

20 0.8

测试中的平均数值
更快的写入速度，GB/s

19.2 1.0

测试中的平均数值

规格

完整的技术规格清单

Kingston 99U5701-036.A00G 16GB

G Skill Intl F4-4000C15-8GTZR 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

374 25
读取速度，GB/s

0.8 20.0
写入速度，GB/s

1.0 19.2
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

269 4243

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 4ATF1G64AZ-3G2E1 8GB

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Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMA82GU6MFR8N-TF 16GB

SK Hynix HMA82GU6MFR8N-TF 16GB

Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

Teikon TMA81GS6CJR8N-VKSC 8GB

Teikon TMA81GS6CJR8N-VKSC 8GB

Kingston 99U5403-465.A00LF 8GB

Kingston 99U5403-465.A00LF 8GB

Micron Technology 9ASF51272PZ-2G1B1 4GB

Micron Technology 9ASF51272PZ-2G1B1 4GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Kingston XCCT36-MIE 16GB

Kingston XCCT36-MIE 16GB