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Kingston ACR16D3LS1KNG/8G 8GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Kingston ACR16D3LS1KNG/8G 8GB vs Crucial Technology BLS4G4D240FSE.M8FADM 4GB

总分
star star star star star
Kingston ACR16D3LS1KNG/8G 8GB

Kingston ACR16D3LS1KNG/8G 8GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

差异 规格 评论

差异

Kingston ACR16D3LS1KNG/8G 8GB 需要考虑的原因
Kingston ACR16D3LS1KNG/8G 8GB
报告一个错误
Crucial Technology BLS4G4D240FSE.M8FADM 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 28
    左右 -17% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.0 left arrow 5.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston ACR16D3LS1KNG/8G 8GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 24
  • 读取速度，GB/s
    9.7 left arrow 15.5
  • 写入速度，GB/s
    5.2 left arrow 11.0
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1731 left arrow 2445

Kingston ACR16D3LS1KNG/8G 8GB RAM的比较

Wilk Elektronik S.A. GR1600S3V64L11/8G 8GB
Kingston KGTWW1-MIE 4GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Kingston ACR16D3LS1KNG/8G 8GB
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Crucial Technology BLS4G4D240FSE.M8FADM 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Samsung M391B5673EH1-CH9 2GB
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内存RAM
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