Kingston ACR16D3LS1NGG/2G 2GB vs Corsair CMK128GX4M4D3600C18 32GB

总分

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

总分

Corsair CMK128GX4M4D3600C18 32GB

Corsair CMK128GX4M4D3600C18 32GB

差异规格评论

差异

Kingston ACR16D3LS1NGG/2G 2GB

需要考虑的原因
Kingston ACR16D3LS1NGG/2G 2GB

报告一个错误

Corsair CMK128GX4M4D3600C18 32GB

需要考虑的原因
Corsair CMK128GX4M4D3600C18 32GB

报告一个错误

低于PassMark测试中的延时，ns

33 84

左右 -155% 更低的延时
更快的读取速度，GB/s

16.1 5

测试中的平均数值
更快的写入速度，GB/s

14.8 3.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston ACR16D3LS1NGG/2G 2GB

Corsair CMK128GX4M4D3600C18 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

84 33
读取速度，GB/s

5.0 16.1
写入速度，GB/s

3.6 14.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

878 3599

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Micron Technology 8ATF1G64AZ-2G6D1 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

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Kingston 9905624-051.A00G 8GB

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Kingston 9905403-515.A00LF 8GB

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G Skill Intl F4-3200C22-8GRS 8GB

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Samsung M378B5273CH0-CH9 4GB

Crucial Technology BLS8G4D240FSE.16FAR 8GB

Crucial Technology BLS8G4D240FSE.16FAR 8GB