Kingston ACR16D3LS1NGG/2G 2GB vs Kingston KMKYF9-HYA 8GB

总分

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

总分

Kingston KMKYF9-HYA 8GB

Kingston KMKYF9-HYA 8GB

差异规格评论

差异

Kingston ACR16D3LS1NGG/2G 2GB

需要考虑的原因
Kingston ACR16D3LS1NGG/2G 2GB

报告一个错误

Kingston KMKYF9-HYA 8GB

需要考虑的原因
Kingston KMKYF9-HYA 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 84

左右 -265% 更低的延时
更快的读取速度，GB/s

16.9 5

测试中的平均数值
更快的写入速度，GB/s

12.8 3.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston ACR16D3LS1NGG/2G 2GB

Kingston KMKYF9-HYA 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

84 23
读取速度，GB/s

5.0 16.9
写入速度，GB/s

3.6 12.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

878 2899

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70QB0-CK0 8GB

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Crucial Technology BL16G32C16U4W.16FE 16GB

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Crucial Technology BL8G26C16U4B.8FE 8GB

Crucial Technology BLS8G4D30AESBK.M8FE 8GB

Crucial Technology BLS8G4D30AESBK.M8FE 8GB

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Samsung M393B1K70QB0-CK0 8GB

SK Hynix HMA81GU6MFR8N-UH 8GB

SK Hynix HMA81GU6MFR8N-UH 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Samsung M471A1K1KBB1-CRC 8GB

Samsung M471A1K1KBB1-CRC 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Corsair CMK32GX4M2A2800C16 16GB

Corsair CMK32GX4M2A2800C16 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Smart Modular SMU4TDC3C0K0464SCG 4GB

Smart Modular SMU4TDC3C0K0464SCG 4GB