Kingston ACR16D3LS1NGG/2G 2GB vs Patriot Memory (PDP Systems) 4133 C19 Series 8GB

总分

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

总分

Patriot Memory (PDP Systems) 4133 C19 Series 8GB

Patriot Memory (PDP Systems) 4133 C19 Series 8GB

差异规格评论

差异

Kingston ACR16D3LS1NGG/2G 2GB

需要考虑的原因
Kingston ACR16D3LS1NGG/2G 2GB

报告一个错误

Patriot Memory (PDP Systems) 4133 C19 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 4133 C19 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 84

左右 -223% 更低的延时
更快的读取速度，GB/s

19 5

测试中的平均数值
更快的写入速度，GB/s

16.6 3.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston ACR16D3LS1NGG/2G 2GB

Patriot Memory (PDP Systems) 4133 C19 Series 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

84 26
读取速度，GB/s

5.0 19.0
写入速度，GB/s

3.6 16.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

878 3818

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Samsung M378A1K43BB1-CTD 16GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Kingston 99U5584-001.A00LF 4GB

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Kingston KHX2800C14D4/4GX 4GB

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Samsung M378A2G43MX3-CTD 16GB

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Samsung M393B5170FH0-CH9 4GB

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A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Transcend Information TS512MSH64V1H 4GB

Transcend Information TS512MSH64V1H 4GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-3733C17-16GTZSW 16GB

G Skill Intl F4-3733C17-16GTZSW 16GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Kingston 99U5743-031.A00G 16GB

Kingston 99U5743-031.A00G 16GB

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Kingston 9905403-444.A00LF 4GB

Crucial Technology BL16G32C16U4R.M16FE1 16GB

Crucial Technology BL16G32C16U4R.M16FE1 16GB