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Kingston ACR16D3LS1NGG/4G 4GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
比较
Kingston ACR16D3LS1NGG/4G 4GB vs A-DATA Technology AO1P21FC8T1-BSKS 8GB
总分
Kingston ACR16D3LS1NGG/4G 4GB
总分
A-DATA Technology AO1P21FC8T1-BSKS 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR16D3LS1NGG/4G 4GB
报告一个错误
低于PassMark测试中的延时,ns
31
36
左右 14% 更低的延时
需要考虑的原因
A-DATA Technology AO1P21FC8T1-BSKS 8GB
报告一个错误
更快的读取速度,GB/s
13.6
11.4
测试中的平均数值
更快的写入速度,GB/s
8.7
8.4
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Kingston ACR16D3LS1NGG/4G 4GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
31
36
读取速度,GB/s
11.4
13.6
写入速度,GB/s
8.4
8.7
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1906
2231
Kingston ACR16D3LS1NGG/4G 4GB RAM的比较
Crucial Technology CT51264BF160BJ.M8F 4GB
Kingston ACR16D3LS1KNG/4G 4GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
PUSKILL DDR3 1600 8G 8GB
Apacer Technology 78.CAGPL.ARC0B 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMWX16GC3200C16W2E 16GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Apacer Technology 78.CAGP7.AZ20B 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Samsung M378A4G43AB2-CVF 32GB
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-3600C19-16GSXW 16GB
Crucial Technology CT102464BF160B.C16 8GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
Kingston 9965525-018.A00LF 4GB
Kingston LV26D4S9S8HJ-8 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N
Kingston KVR800D2N6/2G 2GB
SK Hynix HMA81GR7MFR8N-UH 8GB
A-DATA Technology VDQVE1B16 2GB
Kingston KV0M5R-HYD 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
Kingston KHX1600C9S3L/8G 8GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
Strontium EVMT8G1600U86S 8GB
G Skill Intl F4-4000C15-8GTRG 8GB
报告一个错误
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Bug description
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