Kingston ACR256X64D3S1333C9 2GB vs Crucial Technology BL8G30C15U4R.M8FE 8GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Crucial Technology BL8G30C15U4R.M8FE 8GB

Crucial Technology BL8G30C15U4R.M8FE 8GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 4% 更低的延时

Crucial Technology BL8G30C15U4R.M8FE 8GB

需要考虑的原因
Crucial Technology BL8G30C15U4R.M8FE 8GB

报告一个错误

更快的读取速度，GB/s

17.2 11.9

测试中的平均数值
更快的写入速度，GB/s

13.6 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology BL8G30C15U4R.M8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 28
读取速度，GB/s

11.9 17.2
写入速度，GB/s

8.5 13.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1620 3324

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Crucial Technology CT4G4DFS8266.C8FB 4GB

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Patriot Memory (PDP Systems) 4000 C19 Series 8GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

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Samsung M378A1G43DB0-CPB 8GB

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Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Eudar Technology Inc. 8GXMP3000CL16 8GB

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AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

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SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

Kingston 99U5471-056.A00LF 8GB

Kingston 99U5471-056.A00LF 8GB