Kingston ACR256X64D3S1333C9 2GB vs Crucial Technology CT4G4DFS824A.M8FE 4GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Crucial Technology CT4G4DFS824A.M8FE 4GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

更快的写入速度，GB/s

8.5 6.6

测试中的平均数值

Crucial Technology CT4G4DFS824A.M8FE 4GB

需要考虑的原因
Crucial Technology CT4G4DFS824A.M8FE 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 27

左右 -13% 更低的延时
更快的读取速度，GB/s

12 11.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 24
读取速度，GB/s

11.9 12.0
写入速度，GB/s

8.5 6.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1620 1433

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Corsair CMW64GX4M4Z2933C16 16GB

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Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

G Skill Intl F4-4200C19-4GTZ 4GB

G Skill Intl F4-4200C19-4GTZ 4GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

G Skill Intl F4-2400C17-8GSXK 8GB

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Kingston 9905403-156.A00LF 2GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Kingston 9932291-002.A00G 4GB

Kingston 9932291-002.A00G 4GB