Kingston ACR256X64D3S1333C9 2GB vs Essencore Limited IM44GU48N21-FFFHM 4GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Essencore Limited IM44GU48N21-FFFHM 4GB

Essencore Limited IM44GU48N21-FFFHM 4GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

Essencore Limited IM44GU48N21-FFFHM 4GB

需要考虑的原因
Essencore Limited IM44GU48N21-FFFHM 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 27

左右 -23% 更低的延时
更快的读取速度，GB/s

15.4 11.9

测试中的平均数值
更快的写入速度，GB/s

12.0 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Essencore Limited IM44GU48N21-FFFHM 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 22
读取速度，GB/s

11.9 15.4
写入速度，GB/s

8.5 12.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1620 2459

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Essencore Limited IM44GU48N21-FFFHM 4GB

Essencore Limited IM44GU48N21-FFFHM 4GB

Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

Kingston K9CXF2-MIE 8GB

Kingston K9CXF2-MIE 8GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

Kingston HP32D4U2S8ME-16 16GB

Kingston HP32D4U2S8ME-16 16GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

DSL Memory D4SS12081SH21A-A 4GB

DSL Memory D4SS12081SH21A-A 4GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Kingston 9905625-029.A00G 8GB

Kingston 9905625-029.A00G 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

G Skill Intl F4-3200C16-8GRS 8GB

G Skill Intl F4-3200C16-8GRS 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Crucial Technology BLS8G4D240FSA.M16FAD 8GB

Crucial Technology BLS8G4D240FSA.M16FAD 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

G Skill Intl F4-3200C16-8GIS 8GB

G Skill Intl F4-3200C16-8GIS 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Crucial Technology BL4G24C16U4B.8FE 4GB

Crucial Technology BL4G24C16U4B.8FE 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Samsung M474A4G43MB1-CTD 32GB

Samsung M474A4G43MB1-CTD 32GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

UMAX Technology 16GB

UMAX Technology 16GB