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Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-2800C15-4GTZB 4GB
比较
Kingston ACR256X64D3S1333C9 2GB vs G Skill Intl F4-2800C15-4GTZB 4GB
总分
Kingston ACR256X64D3S1333C9 2GB
总分
G Skill Intl F4-2800C15-4GTZB 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
需要考虑的原因
G Skill Intl F4-2800C15-4GTZB 4GB
报告一个错误
低于PassMark测试中的延时,ns
20
27
左右 -35% 更低的延时
更快的读取速度,GB/s
19
11.9
测试中的平均数值
更快的写入速度,GB/s
13.7
8.5
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-2800C15-4GTZB 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
20
读取速度,GB/s
11.9
19.0
写入速度,GB/s
8.5
13.7
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1620
3120
Kingston ACR256X64D3S1333C9 2GB RAM的比较
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB
G Skill Intl F4-2800C15-4GTZB 4GB RAM的比较
Kingston 99U5403-036.A00G 4GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Elpida EBJ40EG8BFWB-JS-F 4GB
SK Hynix HMA42GR7AFR4N-TF 16GB
Samsung M471B5173DB0-YK0 4GB
Essencore Limited IM48GU88N26-GIIHMB 8GB
ASint Technology SLB304G08-GGNHM 8GB
A-DATA Technology DDR4 3200 8GB
Corsair CMX4GX3M1A1333C9 4GB
AMD R9S48G3206U2S 8GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-2800C15-4GTZB 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
Avant Technology J642GU42J5213N2 16GB
Kingmax Semiconductor KLDE88F-B8MN5 2GB
Kingston KVR800D2N6/2G 2GB
Samsung M471B1G73QH0-YK0 8GB
Apacer Technology 78.CAGMT.40C0B 8GB
Samsung M471A4G43BB1-CWE 32GB
Crucial Technology CT32G48C40U5.M16A1 32GB
SK Hynix HMT325S6BFR8C-H9 2GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Samsung M391A1G43DB0-CPB 8GB
Crucial Technology CT51264AC800.C16FC 4GB
A-DATA Technology AM1P24HC4R1-BUNS 4GB
Samsung 1600 CL10 Series 8GB
Chun Well Technology Holding Limited D4U0832160B 8GB
报告一个错误
×
Bug description
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