Kingston ACR256X64D3S1333C9 2GB vs G Skill Intl F4-3200C16-4GRB 4GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

G Skill Intl F4-3200C16-4GRB 4GB

G Skill Intl F4-3200C16-4GRB 4GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

G Skill Intl F4-3200C16-4GRB 4GB

需要考虑的原因
G Skill Intl F4-3200C16-4GRB 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 27

左右 -29% 更低的延时
更快的读取速度，GB/s

18.6 11.9

测试中的平均数值
更快的写入速度，GB/s

14.4 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

G Skill Intl F4-3200C16-4GRB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 21
读取速度，GB/s

11.9 18.6
写入速度，GB/s

8.5 14.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1620 3077

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Lexar Co Limited LD4AS008G-H2666GST 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Kingston HX424C15FB/8 8GB

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Kingmax Semiconductor GLLG42F-DA---------- 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Apacer Technology 78.CAGP7.AZC0B 8GB

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Smart Modular SF4641G8CKHI6DFSDS 8GB

Smart Modular SF4641G8CKHI6DFSDS 8GB

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Samsung M471B5173QH0-YK0 4GB

Corsair CMWX16GC3200C16W4 16GB

Corsair CMWX16GC3200C16W4 16GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Corsair CMK16GX4M2Z3600C14 8GB

Corsair CMK16GX4M2Z3600C14 8GB