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Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-4000C17-16GTRGB 16GB
比较
Kingston ACR256X64D3S1333C9 2GB vs G Skill Intl F4-4000C17-16GTRGB 16GB
总分
Kingston ACR256X64D3S1333C9 2GB
总分
G Skill Intl F4-4000C17-16GTRGB 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
低于PassMark测试中的延时,ns
27
34
左右 21% 更低的延时
需要考虑的原因
G Skill Intl F4-4000C17-16GTRGB 16GB
报告一个错误
更快的读取速度,GB/s
15.6
11.9
测试中的平均数值
更快的写入速度,GB/s
14.9
8.5
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-4000C17-16GTRGB 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
34
读取速度,GB/s
11.9
15.6
写入速度,GB/s
8.5
14.9
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1620
3465
Kingston ACR256X64D3S1333C9 2GB RAM的比较
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB
G Skill Intl F4-4000C17-16GTRGB 16GB RAM的比较
G Skill Intl F4-3600C16-8GTZKK 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
TwinMOS 8DHE3MN8-HATP 2GB
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Kingston ACR256X64D3S1333C9 2GB
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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Crucial Technology CT8G4SFRA32A.C4FE 8GB
Kingston KHX1600C9S3L/8G 8GB
Kingston 9905700-011.A00G 8GB
Kingston KHX318C10FR/8G 8GB
Ramaxel Technology RMSA3320MJ78HAF-3200 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
A-DATA Technology DDR4 2133 2OZ 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Corsair CM4X16GC3000C15K4 16GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Samsung 1600 CL10 Series 8GB
A-DATA Technology AO1P32MCST2-BZPS 16GB
Samsung M393B1K70QB0-CK0 8GB
Samsung M391A2K43BB1-CRC 16GB
Kingston ACR512X64D3S13C9G 4GB
Kingston 9905734-063.A00G 32GB
报告一个错误
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Bug description
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