RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston ACR256X64D3S1333C9 2GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
比较
Kingston ACR256X64D3S1333C9 2GB vs Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
总分
Kingston ACR256X64D3S1333C9 2GB
总分
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
低于PassMark测试中的延时,ns
27
29
左右 7% 更低的延时
需要考虑的原因
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
报告一个错误
更快的读取速度,GB/s
17.2
11.9
测试中的平均数值
更快的写入速度,GB/s
15.7
8.5
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
29
读取速度,GB/s
11.9
17.2
写入速度,GB/s
8.5
15.7
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
1620
3546
Kingston ACR256X64D3S1333C9 2GB RAM的比较
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB RAM的比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL8G30C15U4R.M8FE 8GB
Kingston ACR256X64D3S1333C9 2GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Corsair CMK32GX4M4B3866C18 8GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3000C15-4GVR 4GB
Kingston 99U5429-007.A00LF 2GB
Crucial Technology BLS16G4D240FSC.16FBR 16GB
Samsung M471B5773DH0-CH9 2GB
Mushkin 99[2/7/4]189F 4GB
Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Kingston XRMWRN-MIE2 16GB
Corsair CML8GX3M2A1866C9 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C18-32GTRS 32GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston 9905670-012.A00G 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-2933C14-16GFX 16GB
报告一个错误
×
Bug description
Source link