Kingston ACR256X64D3S1333C9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

Kingston ACR256X64D3S1333C9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

报告一个错误

更快的读取速度，GB/s

13.6 11.9

测试中的平均数值
更快的写入速度，GB/s

9.9 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

11.9 13.6
写入速度，GB/s

8.5 9.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1620 2419

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Kingmax Semiconductor GLAF62F-D8---------- 4GB

Kingmax Semiconductor GLAF62F-D8---------- 4GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

Kingston HP26D4U9S1ME-4 4GB

Kingston HP26D4U9S1ME-4 4GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

DSL Memory D4SS12082SH21A-A 8GB

DSL Memory D4SS12082SH21A-A 8GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

Samsung M4 70T2864QZ3-CE6 1GB

Samsung M4 70T2864QZ3-CE6 1GB

Kingston 9905701-006.A00G 16GB

Kingston 9905701-006.A00G 16GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Corsair CMR32GX4M2C3000C16 16GB

Corsair CMR32GX4M2C3000C16 16GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

G Skill Intl F4-3200C16-8GSXKB 8GB

G Skill Intl F4-3200C16-8GSXKB 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Micron Technology 4ATS1G64HZ-2G3B1 8GB

Micron Technology 4ATS1G64HZ-2G3B1 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Crucial Technology CT8G4DFD824A.C16FHP 8GB

Crucial Technology CT8G4DFD824A.C16FHP 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology CT16G4DFS8266.C8FB 16GB

Crucial Technology CT16G4DFS8266.C8FB 16GB

Kingston HP32D4U8S8HC-8XR 8GB

Kingston HP32D4U8S8HC-8XR 8GB

Micron Technology 8ATF1G64AZ-2G3A1 8GB

Micron Technology 8ATF1G64AZ-2G3A1 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-4800C19-8GTESC 8GB

G Skill Intl F4-4800C19-8GTESC 8GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB