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Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB
比较
Kingston ACR256X64D3S1333C9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB
总分
Kingston ACR256X64D3S1333C9 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
低于PassMark测试中的延时,ns
27
41
左右 34% 更低的延时
更快的读取速度,GB/s
11.9
9.3
测试中的平均数值
更快的写入速度,GB/s
8.5
6.9
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB
报告一个错误
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
41
读取速度,GB/s
11.9
9.3
写入速度,GB/s
8.5
6.9
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1620
2044
Kingston ACR256X64D3S1333C9 2GB RAM的比较
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB RAM的比较
TwinMOS 8DPT5MK8-TATP 2GB
Kingston KHX1866C9D3/8GX 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B5270CH0-CH9 4GB
Panram International Corporation PUD42133C158G2VS 8GB
Samsung M378A1K43EB2-CWE 8GB
Micron Technology M471A1K43CB1-CTD 8GB
Kingston 9905471-006.A01LF 4GB
Kingston KHX2666C15D4/8G 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-2666C18-8GRS 8GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Crucial Technology CT16G4DFD824A.M16FB 16GB
Micron Technology 18HTF12872AY-800F1 1GB
GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMSX16GX4M2A2400C16 8GB
Team Group Inc. UD5-6400 16GB
G Skill Intl F4-3200C16-4GTZ 4GB
Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
G Skill Intl F3-1866C8-8GTX 8GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMK32GX4M2C3000C16 16GB
Samsung M393B1K70CH0-CH9 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
SK Hynix HYMP512S64CP8-Y5 1GB
Patriot Memory (PDP Systems) PSD48G26662 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
报告一个错误
×
Bug description
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