Kingston ACR256X64D3S1333C9 2GB vs INTENSO 5641152 4GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

INTENSO 5641152 4GB

INTENSO 5641152 4GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

更快的写入速度，GB/s

8.5 6.8

测试中的平均数值

INTENSO 5641152 4GB

需要考虑的原因
INTENSO 5641152 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 27

左右 -17% 更低的延时
更快的读取速度，GB/s

14.1 11.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

INTENSO 5641152 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 23
读取速度，GB/s

11.9 14.1
写入速度，GB/s

8.5 6.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1620 2215

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-3000C16-8GSXWB 8GB

G Skill Intl F4-3000C16-8GSXWB 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Kingston KHX2400C15D4/8G 8GB

Kingston KHX2400C15D4/8G 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Micron Technology 16G3200CL22 16GB

Micron Technology 16G3200CL22 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Crucial Technology BLS8G4D240FSE.16FBD2 8GB

Crucial Technology BLS8G4D240FSE.16FBD2 8GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Crucial Technology CT4G4SFS8213.C8FBD2 4GB

Crucial Technology CT4G4SFS8213.C8FBD2 4GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

G Skill Intl F4-4600C19-8GTZSWC 8GB

G Skill Intl F4-4600C19-8GTZSWC 8GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMT64GX4M4C3000C15 16GB

Corsair CMT64GX4M4C3000C15 16GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Corsair CMW32GX4M2C3333C16 16GB

Corsair CMW32GX4M2C3333C16 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-2400C17-16GIS 16GB

G Skill Intl F4-2400C17-16GIS 16GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Kingston KF3000C16D4/32GX 32GB

Kingston KF3000C16D4/32GX 32GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

HT Micron HTH5AN8G8NCJR-VKD 8GB

HT Micron HTH5AN8G8NCJR-VKD 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-3200C18-16GRS 16GB

G Skill Intl F4-3200C18-16GRS 16GB