Kingston ACR256X64D3S1333C9 2GB vs Kingston KHX426C13/8G 8GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Kingston KHX426C13/8G 8GB

Kingston KHX426C13/8G 8GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时
更快的写入速度，GB/s

8.5 7.5

测试中的平均数值

Kingston KHX426C13/8G 8GB

需要考虑的原因
Kingston KHX426C13/8G 8GB

报告一个错误

更快的读取速度，GB/s

13.7 11.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Kingston KHX426C13/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

11.9 13.7
写入速度，GB/s

8.5 7.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1620 2610

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AD73I1C1674EV 4GB

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G Skill Intl F4-3000C14-16GVK 16GB

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Kingston 9905471-001.A01LF 2GB

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SK Hynix HMA851U6JJR6N-VK 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Crucial Technology BL16G32C16S4B.16FE 16GB

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Samsung M393B2G70BH0-CK0 16GB

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Super Talent F3200UA8G 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Panram International Corporation W4U2400PS-4G 4GB

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SK Hynix HYMP125S64CP8-S6 2GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

A-DATA Technology AO1E34RCSV1-BD7S 16GB

A-DATA Technology AO1E34RCSV1-BD7S 16GB

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

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Crucial Technology BLE8G4D30AEEA.K16FD 8GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

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Kingston 9905734-062.A00G 32GB