Kingston ACR256X64D3S1333C9 2GB vs Kingston KYXC0V-MIB 16GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Kingston KYXC0V-MIB 16GB

Kingston KYXC0V-MIB 16GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 34

左右 21% 更低的延时

Kingston KYXC0V-MIB 16GB

需要考虑的原因
Kingston KYXC0V-MIB 16GB

报告一个错误

更快的读取速度，GB/s

14.8 11.9

测试中的平均数值
更快的写入速度，GB/s

9.9 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Kingston KYXC0V-MIB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 34
读取速度，GB/s

11.9 14.8
写入速度，GB/s

8.5 9.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1620 2739

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology VDQVE1B16 2GB

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Kingston ACR256X64D3S1333C9 2GB

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Micron Technology 8ATF1G64AZ-3G2E1 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Chun Well Technology Holding Limited D4U0826190B 8GB

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