Kingston ACR256X64D3S1333C9 2GB vs Memphis Electronic D4SO1G724GI-A58SD 8GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Memphis Electronic D4SO1G724GI-A58SD 8GB

Memphis Electronic D4SO1G724GI-A58SD 8GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 30

左右 10% 更低的延时
更快的读取速度，GB/s

11.9 11.7

测试中的平均数值
更快的写入速度，GB/s

8.5 6.6

测试中的平均数值

Memphis Electronic D4SO1G724GI-A58SD 8GB

需要考虑的原因
Memphis Electronic D4SO1G724GI-A58SD 8GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Memphis Electronic D4SO1G724GI-A58SD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 30
读取速度，GB/s

11.9 11.7
写入速度，GB/s

8.5 6.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1620 1832

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Avant Technology F641GU67F9333G 8GB

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SK Hynix HMA82GS6DJR8N-VK 16GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Samsung M393A2G40DBD-CP1???? 16GB

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Kingston KHX3333C16D4/16GX 16GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

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G Skill Intl F4-4000C15-8GTZR 8GB

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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G Skill Intl F4-4000C15-8GVK 8GB

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Apacer Technology 78.01GA0.9K5 1GB

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SK Hynix HMA451U7AFR8N-TF 4GB

SK Hynix HMA451U7AFR8N-TF 4GB

Corsair CMSX16GX4M1A2666C18 16GB

Corsair CMSX16GX4M1A2666C18 16GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB

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Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology CT16G4DFD8266.C16FN 16GB

Crucial Technology CT16G4DFD8266.C16FN 16GB