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Kingston ACR256X64D3S1333C9 2GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Kingston ACR256X64D3S1333C9 2GB vs Micron Technology 8ATF1G64AZ-2G3H1R 8GB

总分
star star star star star
Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分
star star star star star
Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

差异 规格 评论

差异

Kingston ACR256X64D3S1333C9 2GB 需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 38
    左右 29% 更低的延时
Micron Technology 8ATF1G64AZ-2G3H1R 8GB 需要考虑的原因
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.3 left arrow 11.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.5 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 38
  • 读取速度，GB/s
    11.9 left arrow 15.3
  • 写入速度，GB/s
    8.5 left arrow 10.5
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1620 left arrow 2346

Kingston ACR256X64D3S1333C9 2GB RAM的比较

Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Kingston ACR24D4U7S8MB-8 8GB
Kingston ACR24D4U7S8MB-8 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-2400C15-8GVB 8GB
G Skill Intl F4-2400C15-8GVB 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMR32GX4M4C3466C16 8GB
Corsair CMR32GX4M4C3466C16 8GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Crucial Technology BL16G26C16U4B.16FD 16GB
Crucial Technology BL16G26C16U4B.16FD 16GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
G Skill Intl F4-4000C18-32GTZR 32GB
G Skill Intl F4-4000C18-32GTZR 32GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMK8GX4M1A2400C14 8GB
Corsair CMK8GX4M1A2400C14 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Gold Key Technology Co Ltd NMUD480E86-3200 8GB
Gold Key Technology Co Ltd NMUD480E86-3200 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C
Ramaxel Technology RMT3170ME68F9F1600 4GB
Ramaxel Technology RMT3170ME68F9F1600 4GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
Corsair CMW16GX4M2D3600C16 8GB
Corsair CMW16GX4M2D3600C16 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Apacer Technology GD2.1527WE.001 8GB
Apacer Technology GD2.1527WE.001 8GB
内存RAM
A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO10240
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Corsair CM4X8GD3200C16K2E 8GB
Corsair CM4X8GD3200C16K2E 8GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
内存RAM