Kingston ACR256X64D3S1333C9 2GB vs Panram International Corporation PUD42133C138G4NJK 8GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Panram International Corporation PUD42133C138G4NJK 8GB

Panram International Corporation PUD42133C138G4NJK 8GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 74

左右 64% 更低的延时

Panram International Corporation PUD42133C138G4NJK 8GB

需要考虑的原因
Panram International Corporation PUD42133C138G4NJK 8GB

报告一个错误

更快的读取速度，GB/s

14.9 11.9

测试中的平均数值
更快的写入速度，GB/s

9.0 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Panram International Corporation PUD42133C138G4NJK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 74
读取速度，GB/s

11.9 14.9
写入速度，GB/s

8.5 9.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1620 1925

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Corsair CMU32GX4M2C3200C16 16GB

Corsair CMU32GX4M2C3200C16 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

SK Hynix HMAA4GU6MJR8N-VK 32GB

SK Hynix HMAA4GU6MJR8N-VK 32GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

SK Hynix HMA82GS6DJR8N-XN 16GB

SK Hynix HMA82GS6DJR8N-XN 16GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 4ATF51264AZ-2G6E1 4GB

Micron Technology 4ATF51264AZ-2G6E1 4GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

Crucial Technology BLS4G4D240FSB.M8FBD 4GB

Crucial Technology BLS4G4D240FSB.M8FBD 4GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Corsair CMK16GX4M2E4333C19 8GB

Corsair CMK16GX4M2E4333C19 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Corsair CMV16GX4M1L2400C16 16GB

Corsair CMV16GX4M1L2400C16 16GB

Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB

Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Kingston HP26D4S9S1ME-4 4GB

Kingston HP26D4S9S1ME-4 4GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Wilk Elektronik S.A. IRX2666D464L16/16G 16GB

Wilk Elektronik S.A. IRX2666D464L16/16G 16GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Samsung M393A1K43BB1-CTD 8GB

Samsung M393A1K43BB1-CTD 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Panram International Corporation M424016 4GB

Panram International Corporation M424016 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB