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Kingston ACR256X64D3S1333C9 2GB
Patriot Memory (PDP Systems) PSD48G21332 8GB
比较
Kingston ACR256X64D3S1333C9 2GB vs Patriot Memory (PDP Systems) PSD48G21332 8GB
总分
Kingston ACR256X64D3S1333C9 2GB
总分
Patriot Memory (PDP Systems) PSD48G21332 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
需要考虑的原因
Patriot Memory (PDP Systems) PSD48G21332 8GB
报告一个错误
更快的读取速度,GB/s
13.3
11.9
测试中的平均数值
更快的写入速度,GB/s
9.8
8.5
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
Patriot Memory (PDP Systems) PSD48G21332 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
27
读取速度,GB/s
11.9
13.3
写入速度,GB/s
8.5
9.8
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1620
2439
Kingston ACR256X64D3S1333C9 2GB RAM的比较
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB
Patriot Memory (PDP Systems) PSD48G21332 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Team Group Inc. Vulcan-1600 4GB
Avant Technology W641GU42J9266NB 8GB
Nanya Technology M2F4G64CB8HB9N-CG 4GB
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Samsung M471B5273EB0-CK0 4GB
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Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CT16G4DFD824A.M16FB 16GB
Samsung M3 93T5750CZA-CE6 2GB
Mushkin MR[A/B]4U346GJJM8G 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingston ACR26D4S9D8ME-16 16GB
Samsung M471B5173QH0-YK0 4GB
Micron Technology 18ADF1G72PZ-2G1A1 8GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3200C14-8GTZR 8GB
报告一个错误
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