Kingston ACR256X64D3S1333C9 2GB vs SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 42

左右 36% 更低的延时

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

需要考虑的原因
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

报告一个错误

更快的读取速度，GB/s

15.7 11.9

测试中的平均数值
更快的写入速度，GB/s

11.9 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 42
读取速度，GB/s

11.9 15.7
写入速度，GB/s

8.5 11.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1620 2737

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hexon Technology Pte Ltd HEXON 1GB

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Kingston 9965516-112.A00LF 16GB

Crucial Technology CT16G4SFD824A.M16FA 16GB

Crucial Technology CT16G4SFD824A.M16FA 16GB

Corsair CMX32GX3M4A1600C11 8GB

Corsair CMX32GX3M4A1600C11 8GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-4266C19-8GTRS 8GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Crucial Technology BL16G26C16U4B.16FE 16GB

Crucial Technology BL16G26C16U4B.16FE 16GB