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Kingston ACR256X64D3S1333C9 2GB
SK Hynix HMT125S6TFR8C-H9 2GB
比较
Kingston ACR256X64D3S1333C9 2GB vs SK Hynix HMT125S6TFR8C-H9 2GB
总分
Kingston ACR256X64D3S1333C9 2GB
总分
SK Hynix HMT125S6TFR8C-H9 2GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
需要考虑的原因
SK Hynix HMT125S6TFR8C-H9 2GB
报告一个错误
更快的写入速度,GB/s
8.6
8.5
测试中的平均数值
规格
完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
SK Hynix HMT125S6TFR8C-H9 2GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
27
27
读取速度,GB/s
11.9
11.9
写入速度,GB/s
8.5
8.6
内存带宽,mbps
10600
10600
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
排名PassMark (越多越好)
1620
1378
Kingston ACR256X64D3S1333C9 2GB RAM的比较
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB
SK Hynix HMT125S6TFR8C-H9 2GB RAM的比较
Samsung M471B5173EB0-YK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5469-045.A00LF 4GB
G Skill Intl F4-2400C17-4GIS 4GB
Corsair CM3X8GA2400C11Y2R 8GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F4-3200C16-8GRS 8GB
Samsung 1600 CL10 Series 8GB
SK Hynix HMA425S6AFR6N-UH 2GB
Kingston 99U5474-026.A00LF 4GB
Corsair CMR16GX4M2Z2933C16 8GB
Kingston ACR256X64D3S1333C9 2GB
SK Hynix HMT125S6TFR8C-H9 2GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CMV16GX4M1A2666C18 16GB
Samsung M471B5173DB0-YK0 4GB
Corsair CM4B8G1L2666A18S4 8GB
Peak Electronics 256X64M-67E 2GB
Samsung M393A4K40BB1-CRC 32GB
Team Group Inc. Vulcan-1600 4GB
Samsung M378A2K43EB1-CWE 16GB
Team Group Inc. Vulcan-1600 4GB
G Skill Intl F4-3600C16-8GTESC 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Apacer Technology 78.C1GQB.4032B 8GB
Corsair CMY16GX3M4A2133C8 4GB
Smart Modular SF464128CKHIWDFSEG 4GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
报告一个错误
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