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Kingston ACR256X64D3S1333C9 2GB
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
比较
Kingston ACR256X64D3S1333C9 2GB vs Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
总分
Kingston ACR256X64D3S1333C9 2GB
总分
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
低于PassMark测试中的延时,ns
27
31
左右 13% 更低的延时
需要考虑的原因
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
报告一个错误
更快的读取速度,GB/s
17.9
11.9
测试中的平均数值
更快的写入速度,GB/s
14.7
8.5
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
31
读取速度,GB/s
11.9
17.9
写入速度,GB/s
8.5
14.7
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1620
3444
Kingston ACR256X64D3S1333C9 2GB RAM的比较
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CM5S16GM4800A40K2 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16KTF1G64HZ-1G6E1 8GB
Kingston 9905403-061.A00LF 2GB
Kingston 9905630-066.A00G 16GB
Kingston 99U5429-007.A00LF 2GB
Kingston 9965589-043.E00G 16GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT4G4DFS8213.C8FADP 4GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
Kingston 99U5474-038.A00LF 4GB
Micron Technology 36ASF2G72PZ-2G3B1 16GB
Crucial Technology BLT4G3D1337DT1TX0. 4GB
Samsung M391A1K43BB1-CRC 8GB
Samsung M471B5673FH0-CF8 2GB
Corsair CM4B16G1J2400A16K2-O 16GB
报告一个错误
×
Bug description
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